Implementation of Quantum Controlled-NOT Gates Using Asymmetric Semiconductor Quantum Dots

We propose an implementation of a quantum controlledNOT gate on the basis of dipole-dipole interacting asymmetric quantum dots. Our implementation does not require application of an external electric field as the one proposed earlier [Barenco et. al, Phys. Rev. Lett., 74, 4083 (1995)]. Results of our numerical simulations show that owing to the dot asymmetricity, the coupling constant of the dipole-dipole interaction can be made as large as h̄ωd ≈ 50 meV while keeping the probability of the spontaneous emission low. This provides conditions for resolving different entangled quantum states experimentally.